Invention Grant
- Patent Title: Wafer and method for producing a wafer
- Patent Title (中): 晶片及其制造方法
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Application No.: US11864584Application Date: 2007-09-28
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Publication No.: US08378384B2Publication Date: 2013-02-19
- Inventor: Hans-Joachim Schulze , Hans-Joerg Timme , Helmut Strack
- Applicant: Hans-Joachim Schulze , Hans-Joerg Timme , Helmut Strack
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L31/102
Abstract:
A wafer includes a wafer frontside surface and a region adjacent to the wafer frontside surface. The region includes oxygen precipitates and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property.
Public/Granted literature
- US20090087632A1 Wafer and Method for Producing a Wafer Public/Granted day:2009-04-02
Information query
IPC分类:
