Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12805160Application Date: 2010-07-15
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Publication No.: US08378389B2Publication Date: 2013-02-19
- Inventor: Shinichi Tamari , Mitsuhiro Nakamura , Koji Wakizono , Tomoya Nishida , Yuji Ibusuki
- Applicant: Shinichi Tamari , Mitsuhiro Nakamura , Koji Wakizono , Tomoya Nishida , Yuji Ibusuki
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2009-180653 20090803; JP2010-031710 20100216
- Main IPC: H01L29/80
- IPC: H01L29/80
Abstract:
A semiconductor device includes: a compound semiconductor substrate; an n-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; an n-type first barrier layer that forms a heterojunction with the first channel layer, and supplies an n-type charge to the first channel layer; and a p-type gate region that has a pn junction-type potential barrier against the n-type first barrier layer; and a p-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a p-type second channel layer, and an n-type gate region that has a pn junction-type potential barrier against the p-type second channel layer.
Public/Granted literature
- US20110024798A1 Semiconductor device and method for manufacturing same Public/Granted day:2011-02-03
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