Invention Grant
US08378433B2 Semiconductor device with a controlled cavity and method of formation
有权
具有受控腔体和形成方法的半导体器件
- Patent Title: Semiconductor device with a controlled cavity and method of formation
- Patent Title (中): 具有受控腔体和形成方法的半导体器件
-
Application No.: US13160137Application Date: 2011-06-14
-
Publication No.: US08378433B2Publication Date: 2013-02-19
- Inventor: Scott M. Hayes , Dwight L. Daniels
- Applicant: Scott M. Hayes , Dwight L. Daniels
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Mary Jo Bertani; Joanna G. Chiu
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L23/02
Abstract:
A semiconductor device includes a first cap wafer having a first opening extending through the first cap wafer, and a second cap wafer bonded to the first cap wafer, wherein the second cap wafer has a second opening extending through the second cap wafer, and wherein the first opening is misaligned with respect to the second opening. The second cap wafer is bonded to a device wafer, wherein a cavity is formed between the device wafer and the second cap wafer, and wherein the device wafer comprises at least one semiconductor device in the cavity. A vacuum sealing layer is formed over the first cap wafer, wherein the sealing layer vacuum seals the first opening.
Public/Granted literature
- US20110241181A1 SEMICONDUCTOR DEVICE WITH A CONTROLLED CAVITY AND METHOD OF FORMATION Public/Granted day:2011-10-06
Information query
IPC分类:
