Invention Grant
- Patent Title: Semiconductor device having through substrate vias
- Patent Title (中): 具有通过衬底通孔的半导体器件
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Application No.: US13214759Application Date: 2011-08-22
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Publication No.: US08378462B2Publication Date: 2013-02-19
- Inventor: Susumu Matsumoto
- Applicant: Susumu Matsumoto
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-050758 20090304
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/053 ; H01L23/12 ; H01L23/48 ; H01L23/52 ; H01L23/02
Abstract:
A semiconductor device includes a semiconductor substrate including a first surface serving as an element formation surface, and a second surface opposite to the first surface; a through-via penetrating the semiconductor substrate; an insulating via coating film formed between a sidewall of the through-via and the semiconductor substrate; and an insulating protective film formed on the second surface of the semiconductor substrate. The via coating film and the protective film are different insulating films from each other.
Public/Granted literature
- US20110304057A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE DEVICE Public/Granted day:2011-12-15
Information query
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