A semiconductor device includes a protective insulating film, an opening formed in the protective insulating film, an electrode pad located within the opening, a bump formed on the protective insulating film, and an interconnect. The bump includes a bump core and a conductive film. The bump core includes an insulating resin layer and a conductive resin layer located on the insulating resin layer. The conductive film is formed on at least the upper surface of the bump core. The interconnect connects the conductive film of the bump and the electrode pad.