Invention Grant
- Patent Title: Semiconductor substrate with interlayer connection and method for production of a semiconductor substrate with interlayer connection
- Patent Title (中): 具有层间连接的半导体衬底和用于制造具有层间连接的半导体衬底的方法
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Application No.: US12670303Application Date: 2008-07-23
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Publication No.: US08378496B2Publication Date: 2013-02-19
- Inventor: Franz Schrank , Martin Schrems , Jochen Kraft
- Applicant: Franz Schrank , Martin Schrems , Jochen Kraft
- Applicant Address: AT Unterpremstaetten
- Assignee: austriamicrosystems AG
- Current Assignee: austriamicrosystems AG
- Current Assignee Address: AT Unterpremstaetten
- Agency: Cozen O'Connor
- Priority: DE102007034306 20070724
- International Application: PCT/EP2008/059662 WO 20080723
- International Announcement: WO2009/013315 WO 20090129
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/44
Abstract:
The interlayer connection of the substrate is formed by a contact-hole filling (4) of a semiconductor layer (11) and metallization (17) of a recess (16) in a reverse-side semiconductor layer (13), wherein the semiconductor layers are separated from each other by a buried insulation layer (12), at whose layer position the contact-hole filling or the metallization ends.
Public/Granted literature
- US20100314762A1 Semiconductor Substrate with Through-Contact and Method for Production Thereof Public/Granted day:2010-12-16
Information query
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