Invention Grant
- Patent Title: Semiconductor substrate structure and semiconductor device
- Patent Title (中): 半导体衬底结构和半导体器件
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Application No.: US13189097Application Date: 2011-07-22
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Publication No.: US08378505B2Publication Date: 2013-02-19
- Inventor: Sumiaki Nakano
- Applicant: Sumiaki Nakano
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-023425 20090204
- Main IPC: H01L23/492
- IPC: H01L23/492
Abstract:
A semiconductor substrate structure includes an electrode pad formed on a semiconductor substrate, a protective film formed on the semiconductor substrate with a distance from the electrode pad, and a bump formed on the electrode pad. The protective film has a barrier portion surrounding the electrode pad. The barrier portion has a height different from a height of a part of the protective film other than the barrier portion.
Public/Granted literature
- US20110278720A1 SEMICONDUCTOR SUBSTRATE STRUCTURE AND SEMICONDUCTOR DEVICE Public/Granted day:2011-11-17
Information query
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