Invention Grant
US08378734B2 Method and system for reduction of off-current in field effect transistors
有权
用于减小场效应晶体管中的截止电流的方法和系统
- Patent Title: Method and system for reduction of off-current in field effect transistors
- Patent Title (中): 用于减小场效应晶体管中的截止电流的方法和系统
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Application No.: US10396312Application Date: 2003-03-26
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Publication No.: US08378734B2Publication Date: 2013-02-19
- Inventor: Yong-Min Ha , Kee-Jong Kim , Byeoung-Koo Kim
- Applicant: Yong-Min Ha , Kee-Jong Kim , Byeoung-Koo Kim
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge, LLP
- Priority: KR10-2002-0051513 20020829
- Main IPC: H03K17/687
- IPC: H03K17/687
Abstract:
A method for reducing an off-current of a field effect transistor in which two electrodes of the field effect transistor have fixed voltage values and the rest electrode has an alternating voltage value by an AC voltage pulse generator to form an off-stress near source and drain junctions in turn.
Public/Granted literature
- US20040041618A1 Method and system for reduction of off-current in field effect transistors Public/Granted day:2004-03-04
Information query
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