Invention Grant
- Patent Title: Die temperature sensor circuit
- Patent Title (中): 模温传感器电路
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Application No.: US12955598Application Date: 2010-11-29
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Publication No.: US08378735B2Publication Date: 2013-02-19
- Inventor: Edevaldo Pereira Da Silva, Jr. , Ricardo Pureza Coimbra
- Applicant: Edevaldo Pereira Da Silva, Jr. , Ricardo Pureza Coimbra
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L35/00
- IPC: H01L35/00 ; H01L37/00 ; H03K3/42 ; H03K17/78

Abstract:
A die temperature sensor circuit (200) includes an amplifier (203) that has first and second stages of amplification and that has bipolar transistors (201 and 202) as an input differential pair. The bipolar transistors have different current densities. A difference between base-emitter voltages of the bipolar transistors is proportional to absolute temperature of the bipolar transistors. The bipolar transistors also provide amplification for the first stage of amplification. Multiple feedback loops maintain a same ratio between the current densities of the bipolar transistors over temperature by changing collector currents that bias the bipolar transistors. A feedback loop includes a second stage of amplification and such feedback loop cancels effect that base currents of the bipolar transistors have on an output signal of the die temperature sensor circuit.
Public/Granted literature
- US20120133422A1 DIE TEMPERATURE SENSOR CIRCUIT Public/Granted day:2012-05-31
Information query
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