Invention Grant
US08378776B1 Semiconductor structure with galvanically-isolated signal and power paths
有权
具有电隔离信号和电源路径的半导体结构
- Patent Title: Semiconductor structure with galvanically-isolated signal and power paths
- Patent Title (中): 具有电隔离信号和电源路径的半导体结构
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Application No.: US13218682Application Date: 2011-08-26
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Publication No.: US08378776B1Publication Date: 2013-02-19
- Inventor: Ann Gabrys , William French , Peter J. Hopper , Dok Won Lee , Peter Johnson
- Applicant: Ann Gabrys , William French , Peter J. Hopper , Dok Won Lee , Peter Johnson
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01F5/00
- IPC: H01F5/00 ; H01F27/28 ; H01F27/29 ; H01L29/66 ; H01L27/08 ; H01L21/02 ; H01L27/06
Abstract:
A galvanic die has signal structures and a transformer structure that provide galvanically-isolated signal and power paths for a high-voltage die and a low-voltage die, which are both physically supported by the galvanic die and electrically connected to the signal and transformer structures of the galvanic die.
Public/Granted literature
- US20130049916A1 SEMICONDUCTOR STRUCTURE WITH GALVANICALLY-ISOLATED SIGNAL AND POWER PATHS Public/Granted day:2013-02-28
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