Invention Grant
US08379296B2 Nonlinear optical CdSiP2 crystal and producing method and devices therefrom
有权
非线性光学CdSiP2晶体及其制造方法和装置
- Patent Title: Nonlinear optical CdSiP2 crystal and producing method and devices therefrom
- Patent Title (中): 非线性光学CdSiP2晶体及其制造方法和装置
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Application No.: US12809103Application Date: 2009-10-23
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Publication No.: US08379296B2Publication Date: 2013-02-19
- Inventor: Peter G Schunemann , Kevin T Zawilski
- Applicant: Peter G Schunemann , Kevin T Zawilski
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agency: Maine Cernota & Rardin
- Agent Douglas P. Burum; Daniel J. Long
- International Application: PCT/US2009/061786 WO 20091023
- International Announcement: WO2010/082968 WO 20100722
- Main IPC: G02F2/02
- IPC: G02F2/02 ; G02F1/35

Abstract:
CdSiP2 crystals with sizes and optical quality suitable for use as nonlinear optical devices are disclosed, as well as NLO devices based thereupon. A method of growing the crystals by directional solidification from a stoichiometric melt is also disclosed. The disclosed NLO crystals have a higher nonlinear coefficient than prior art crystals that can be pumped by solid state lasers, and are particularly useful for frequency shifting 1.06 μm, 1.55 μm, and 2 μm lasers to wavelengths between 2 μm and 10 μm. Due to the high thermal conductivity and low losses of the claimed CdSiP2 crystals, average output power can exceed 10 W without severe thermal lensing. A 6.45 μm laser source for use as a medical laser scalpel is also disclosed, in which a CdSiP2 crystal is configured for non-critical phase matching, pumped by a 1064 nm Nd:YAG laser, and temperature-tuned to produce output at 6.45 μm.
Public/Granted literature
- US20110054451A1 NONLINEAR OPTICAL CdSiP2 CRYSTAL AND PRODUCING METHOD AND DEVICES THEREFROM Public/Granted day:2011-03-03
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