Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13243738Application Date: 2011-09-23
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Publication No.: US08379436B2Publication Date: 2013-02-19
- Inventor: Atsushi Kawasumi
- Applicant: Atsushi Kawasumi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Knobbe, Martens, Olson & Bear LLP
- Priority: JP2011-016245 20110128
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
According to one embodiment, a semiconductor memory device includes a plurality of memory cells each of which is arranged at the intersection position between a pair of complementary bit lines and a word line, and stores data between a first power supply voltage applied to a first node and a voltage applied to a virtual ground node, and a control circuit which changes the amount of current of the pair of bit lines in accordance with the amplitude of the pair of bit lines for each column in a memory macro, that is formed by arranging the plurality of memory cells in a matrix, in the data read operation of each of the plurality of memory cells.
Public/Granted literature
- US20120195135A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2012-08-02
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