Invention Grant
- Patent Title: Variable resistance memory and memory system including the same
- Patent Title (中): 可变电阻存储器和存储器系统包括相同的
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Application No.: US12854540Application Date: 2010-08-11
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Publication No.: US08379441B2Publication Date: 2013-02-19
- Inventor: Kwang Soo Seol , Yoondong Park , Deok-kee Kim
- Applicant: Kwang Soo Seol , Yoondong Park , Deok-kee Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2009-0073908 20090811
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A variable resistance memory array includes at least one variable resistance memory cell, wherein each variable resistance memory cell includes a well having a first type; and a cell structure on the well, the cell structure including a structure having a second type different from the first type and a variable resistance layer on the structure.
Public/Granted literature
- US20110038197A1 VARIABLE RESISTANCE MEMORY AND MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2011-02-17
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