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US08379441B2 Variable resistance memory and memory system including the same 有权
可变电阻存储器和存储器系统包括相同的

Variable resistance memory and memory system including the same
Abstract:
A variable resistance memory array includes at least one variable resistance memory cell, wherein each variable resistance memory cell includes a well having a first type; and a cell structure on the well, the cell structure including a structure having a second type different from the first type and a variable resistance layer on the structure.
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