Invention Grant
- Patent Title: Detection of broken word-lines in memory arrays
- Patent Title (中): 检测存储器阵列中断字符
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Application No.: US13101765Application Date: 2011-05-05
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Publication No.: US08379454B2Publication Date: 2013-02-19
- Inventor: Mrinal Kochar , Jianmin Huang , Jun Wan
- Applicant: Mrinal Kochar , Jianmin Huang , Jun Wan
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
Techniques and corresponding circuitry are presented for the detection of broken wordlines in a memory array. An “inter-word-line” comparison where the program loop counts of different word-lines are compared in order to determine whether a word-line may be defective. The number of programming pulses needed for the cells along a word-line WLn is compared to the number needed for a preceding word-line, such as WLn or WL(n−1), to see whether it exceeds this earlier value by a threshold value. If the word-line requires an excessive number of pulses, relative the earlier word-line, to complete programming, it is treated as defective.
Public/Granted literature
- US20120281479A1 Detection of Broken Word-Lines in Memory Arrays Public/Granted day:2012-11-08
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