Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US13024979Application Date: 2011-02-10
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Publication No.: US08379464B2Publication Date: 2013-02-19
- Inventor: Atsushi Nakakubo
- Applicant: Atsushi Nakakubo
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2010-081152 20100331
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
A semiconductor device includes a booster circuit and a detector. The booster circuit is configured to boost an input voltage and output an output voltage, and the detector is configured to output the output voltage, which is output from the booster circuit, and control the booster circuit to generate a plurality of different voltages in accordance with an operating mode.
Public/Granted literature
- US20110242896A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2011-10-06
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