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US08379682B2 Nitride semiconductor laser chip and method of fabrication thereof 有权
氮化物半导体激光芯片及其制造方法

Nitride semiconductor laser chip and method of fabrication thereof
Abstract:
A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less.
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