Invention Grant
- Patent Title: Nitride semiconductor laser chip and method of fabrication thereof
- Patent Title (中): 氮化物半导体激光芯片及其制造方法
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Application No.: US13067747Application Date: 2011-06-23
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Publication No.: US08379682B2Publication Date: 2013-02-19
- Inventor: Kentaro Tani , Toshiyuki Kawakami , Yoshihiko Tani
- Applicant: Kentaro Tani , Toshiyuki Kawakami , Yoshihiko Tani
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2010-144660 20100625
- Main IPC: H01S3/04
- IPC: H01S3/04

Abstract:
A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less.
Public/Granted literature
- US20110317733A1 Nitride semiconductor laser chip and method of fabrication thereof Public/Granted day:2011-12-29
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