A model parameter extracting apparatus includes: a binning processor for carrying out a binning process; and a model parameter extractor for extracting a model parameter for each of multiple bins formed by the binning process. The model parameter extractor extracts a first model parameter corresponding to a first end portion of a target bin. Based on the first model parameter, the model parameter extractor sets up a candidate for a second model parameter corresponding to a second end portion of the target bin. Subsequently, based on the first model parameter and the candidate for the second model parameter, the model parameter extractor finds a start-point-side gradient and an end-point-side gradient of a limited curve representing an electric characteristic of a semiconductor device. Then, based on a result of a comparison between the gradients, the model parameter extractor extracts the second model parameter.