Invention Grant
- Patent Title: Flash storage device and data access method of flash memory
- Patent Title (中): Flash存储设备和闪存的数据访问方法
-
Application No.: US12955726Application Date: 2010-11-29
-
Publication No.: US08380920B2Publication Date: 2013-02-19
- Inventor: Wei-Yi Hsiao
- Applicant: Wei-Yi Hsiao
- Applicant Address: TW Jhubei, Hsinchu County
- Assignee: Silicon Motion, Inc.
- Current Assignee: Silicon Motion, Inc.
- Current Assignee Address: TW Jhubei, Hsinchu County
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW99101462A 20100120
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02

Abstract:
The invention provides a data access method of a flash memory. First, a write command, a write address, and target data are received from a host. A target block corresponding to the write address is then determined from the flash memory. Whether a storage space corresponding to the write address in the target block has stored data therein is then determined. When the storage space of the target block does not have stored data therein, the target data is written into the storage space of the target block. When the storage space of the target block does have stored data therein, whether a child block mapped to the target block exists in the flash memory is determined. When the child block exists in the flash memory, the target data is written into the child block.
Public/Granted literature
- US20110179217A1 Flash Storage Device and Data Access Method of Flash Memory Public/Granted day:2011-07-21
Information query