Invention Grant
- Patent Title: Multi-channel multi-port memory
- Patent Title (中): 多通道多端口存储器
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Application No.: US12823515Application Date: 2010-06-25
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Publication No.: US08380940B2Publication Date: 2013-02-19
- Inventor: Feng Wang , Shiqun Gu , Matthew Michael Nowak
- Applicant: Feng Wang , Shiqun Gu , Matthew Michael Nowak
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
- Main IPC: G06F12/06
- IPC: G06F12/06

Abstract:
A multi-channel multi-port memory is disclosed. In a particular embodiment, the multi-channel memory includes a plurality of channels responsive to a plurality of memory controllers. The multi-channel memory may also include a first multi-port multi-bank structure accessible to a first set of the plurality of channels and a second multi-port multi-bank structure accessible to a second set of the plurality of channels.
Public/Granted literature
- US20110320698A1 Multi-Channel Multi-Port Memory Public/Granted day:2011-12-29
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