Invention Grant
- Patent Title: Structure for a duty cycle correction circuit
- Patent Title (中): 占空比校正电路的结构
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Application No.: US13014828Application Date: 2011-01-27
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Publication No.: US08381143B2Publication Date: 2013-02-19
- Inventor: David W. Boerstler , Eskinder Hailu , Jieming Qi
- Applicant: David W. Boerstler , Eskinder Hailu , Jieming Qi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Stephen J. Walder, Jr.; Matthew B. Talpis
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A design structure for a Duty Cycle Correction (DCC) circuit is provide in which pairs of field effect transistors (FETs) in known DCC circuit topologies are replaced with linear resistors coupled to switches of the DCC circuit such that when the switch is open, the input signal is routed through the linear resistors. The linear resistors are more tolerant of process, voltage and temperature (PVT) fluctuations than FETs and thus, the resulting DCC circuit provides a relatively smaller change in DCC correction range with PVT fluctuations than the known DCC circuit topology that employs FETs. The linear resistors may be provided in parallel with the switches and in series with a pair of FETs having relatively large resistance values. The linear resistors provide resistance that pulls-up or pulls-down the pulse width of the input signal so as to provide correction to the duty cycle of the input signal.
Public/Granted literature
- US20110126162A1 Design Structure for a Duty Cycle Correction Circuit Public/Granted day:2011-05-26
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