Invention Grant
- Patent Title: Light-emitting diode lens
- Patent Title (中): 发光二极管透镜
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Application No.: US13070748Application Date: 2011-03-24
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Publication No.: US08382338B2Publication Date: 2013-02-26
- Inventor: Chung-En Lee
- Applicant: Chung-En Lee
- Applicant Address: CN Guangzhou TW Taipei
- Assignee: Silitek Electronic (Guangzhou) Co., Ltd.,Lite-On Technology Corp.
- Current Assignee: Silitek Electronic (Guangzhou) Co., Ltd.,Lite-On Technology Corp.
- Current Assignee Address: CN Guangzhou TW Taipei
- Agency: Rosenberg, Klein & Lee
- Priority: CN201010215196 20100625
- Main IPC: F21V3/00
- IPC: F21V3/00

Abstract:
A light-emitting diode (LED) lens for covering a LED light source includes a lens body made of a transparent material. The lens body has a light-exit surface and a light-entrance portion. The light-exit surface is configured along the longitudinal direction into a pair of convex surface areas and a concave surface area interconnecting the convex surface areas. The concave surface area has minimum dimensions smaller than maximum dimensions of each of the convex surface areas along first and second transverse directions. The light-entrance portion is adapted for receiving the LED light source, and has a light-incident surface. The light-incident surface has a pair of end portions opposite to each other along the longitudinal direction and extending inclinedly away from the light-exit surface and away from each other.
Public/Granted literature
- US20110317432A1 LIGHT-EMITTING DIODE LENS Public/Granted day:2011-12-29
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