Invention Grant
- Patent Title: Pulsed plasma high aspect ratio dielectric process
- Patent Title (中): 脉冲等离子高宽比电介质工艺
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Application No.: US12711061Application Date: 2010-02-23
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Publication No.: US08382999B2Publication Date: 2013-02-26
- Inventor: Ankur Agarwal , Kenneth S. Collins , Shahid Rauf , Kartik Ramaswamy , Thorsten B. Lill
- Applicant: Ankur Agarwal , Kenneth S. Collins , Shahid Rauf , Kartik Ramaswamy , Thorsten B. Lill
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: G01L21/30
- IPC: G01L21/30 ; G01R31/00
Abstract:
Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power.
Public/Granted literature
- US20100248488A1 PULSED PLASMA HIGH ASPECT RATIO DIELECTRIC PROCESS Public/Granted day:2010-09-30
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