Invention Grant
- Patent Title: Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
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Application No.: US12954087Application Date: 2010-11-24
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Publication No.: US08383002B2Publication Date: 2013-02-26
- Inventor: Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
- Applicant: Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00
Abstract:
The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.
Public/Granted literature
- US20110068082A1 METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR WITH INDEPENDENT WAFER EDGE PROCESS GAS INJECTION Public/Granted day:2011-03-24
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