Invention Grant
- Patent Title: Film formation method and method for manufacturing light-emitting element
- Patent Title (中): 用于制造发光元件的成膜方法和方法
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Application No.: US12629710Application Date: 2009-12-02
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Publication No.: US08383193B2Publication Date: 2013-02-26
- Inventor: Koichiro Tanaka
- Applicant: Koichiro Tanaka
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2008-310491 20081205
- Main IPC: B05D5/06
- IPC: B05D5/06 ; B05D5/00 ; H05B6/00 ; G03C8/00

Abstract:
There is a problem in a method for forming an EL layer by heating with light and transferring an organic material in that the organic material is not uniformly transferred. The present invention relates to a film formation method including the steps of forming a metal film over a first surface of an elastic substrate; forming an organic material layer onto a second surface of the elastic substrate which is opposite to the first surface; placing the second surface of the elastic substrate and a substrate on which a film is to be formed, with a space between the second surface of the elastic substrate and the substrate on which a film is to be formed; heating locally and rapidly the metal film from a first surface side of the elastic substrate to deform the elastic substrate by expansion of the metal film; and transferring the organic material layer from the elastic substrate onto the substrate on which a film is to be formed.
Public/Granted literature
- US20100143610A1 Film Formation Method and Method for Manufacturing Light-Emitting Element Public/Granted day:2010-06-10
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