Invention Grant
- Patent Title: Resists for lithography
- Patent Title (中): 抗光刻
-
Application No.: US11774171Application Date: 2007-07-06
-
Publication No.: US08383316B2Publication Date: 2013-02-26
- Inventor: Gregory D. Cooper , Zhiyun Chen , Z Serpil Gonen Williams , Larry F. Thompson
- Applicant: Gregory D. Cooper , Zhiyun Chen , Z Serpil Gonen Williams , Larry F. Thompson
- Applicant Address: US MD Baltimore
- Assignee: Pixelligent Technologies, LLC
- Current Assignee: Pixelligent Technologies, LLC
- Current Assignee Address: US MD Baltimore
- Agency: Nixon & Vanderhye P.C.
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/213 ; G03F7/22 ; G03F7/30 ; G03C1/725

Abstract:
New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density.
Public/Granted literature
- US20080176166A1 RESISTS FOR LITHOGRAPHY Public/Granted day:2008-07-24
Information query
IPC分类: