Invention Grant
US08383320B2 Resist underlayer film forming composition and method of forming resist pattern using the same
有权
抗蚀剂下层成膜组合物和使用其形成抗蚀剂图案的方法
- Patent Title: Resist underlayer film forming composition and method of forming resist pattern using the same
- Patent Title (中): 抗蚀剂下层成膜组合物和使用其形成抗蚀剂图案的方法
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Application No.: US12682819Application Date: 2008-10-16
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Publication No.: US08383320B2Publication Date: 2013-02-26
- Inventor: Rikimaru Sakamoto , Yoshiomi Hiroi , Tomohisa Ishida , Takafumi Endo
- Applicant: Rikimaru Sakamoto , Yoshiomi Hiroi , Tomohisa Ishida , Takafumi Endo
- Applicant Address: JP Tokyo
- Assignee: Nissan Chemical Industries, Ltd.
- Current Assignee: Nissan Chemical Industries, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2007-283167 20071031
- International Application: PCT/JP2008/068774 WO 20081016
- International Announcement: WO2009/057458 WO 20090507
- Main IPC: G03F7/11
- IPC: G03F7/11 ; G03F7/20 ; C08G59/14 ; H01L21/027
Abstract:
There is provided a composition for forming a resist underlayer film not only having a large selection ratio of a dry etching rate but also exhibiting desired values of the k value and of the refractive index n at a short wavelength such as a wavelength of an ArF excimer laser. A resist underlayer film forming composition for lithography comprising: a linear polymer; and a solvent, wherein a backbone of the linear polymer has a unit structure in which 2,4-dihydroxy benzoic acid is introduced through an ester bond and an ether bond.
Public/Granted literature
- US20100221657A1 RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD OF FORMING RESIST PATTERN USING THE SAME Public/Granted day:2010-09-02
Information query
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