Invention Grant
- Patent Title: Selective imaging through dual photoresist layers
- Patent Title (中): 通过双光致抗蚀剂层选择性成像
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Application No.: US11520425Application Date: 2006-09-13
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Publication No.: US08383323B2Publication Date: 2013-02-26
- Inventor: Pedro Morrison , Kevin Soukup , David Cho , Karla Mendoza
- Applicant: Pedro Morrison , Kevin Soukup , David Cho , Karla Mendoza
- Applicant Address: US TX Austin KR Suwon-si
- Assignee: Samsung Austin Semiconductor, L.P.,Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Austin Semiconductor, L.P.,Samsung Electronics Co., Ltd.
- Current Assignee Address: US TX Austin KR Suwon-si
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A system and method for selective imaging through dual photoresist layers. The system and method includes coating a surface of the wafer with a first resist and baking the wafer to sufficiently drive out solvents in the first resist. The first resist is exposed to a first radiation source and exposing an edge of the wafer having the first resist disposed thereon to the first radiation source. The method further includes hard baking the first resist to the wafer and coating the first resist with a second resist. The method also includes baking the wafer to sufficiently drive out solvents in the second resist and exposing the second resist to a second radiation source. The method also includes exposing select portions of the edge of the wafer having the second resist disposed thereon to the second radiation source and hard baking the second resist to the wafer.
Public/Granted literature
- US20080076068A1 Selective imaging through dual photoresist layers Public/Granted day:2008-03-27
Information query
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