Invention Grant
- Patent Title: Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method therefor
- Patent Title (中): 包括具有叠层结构的磁性隧道结装置及其制造方法的半导体装置
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Application No.: US13566739Application Date: 2012-08-03
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Publication No.: US08383427B2Publication Date: 2013-02-26
- Inventor: Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
- Applicant: Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
- Applicant Address: JP Kawasaki-Shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-146961 20080604
- Main IPC: H01L29/82
- IPC: H01L29/82 ; G11C11/02
Abstract:
A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.
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