Invention Grant
- Patent Title: Method for producing field effect transistors with a back gate and semiconductor device
- Patent Title (中): 用背栅极和半导体器件制造场效晶体管的方法
-
Application No.: US12941562Application Date: 2010-11-08
-
Publication No.: US08383464B2Publication Date: 2013-02-26
- Inventor: Claire Fenouillet-Beranger , Philippe Coronel
- Applicant: Claire Fenouillet-Beranger , Philippe Coronel
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oliff & Berridge, PLC
- Priority: FR0905438 20091112
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The method for producing a field effect transistor on a substrate comprising a support layer, a sacrificial layer and a semi-conducting layer comprises forming an active area in the semi-conducting layer. The active area is delineated by a closed peripheral insulation pattern and comprises an additional pattern made from insulating material. The method also comprises etching the insulating material of the additional pattern to access the sacrificial layer, etching the sacrificial layer resulting in formation of a first cavity, forming a dielectric layer on a top wall of the first cavity, and depositing an electrically conducting layer in the first cavity. The closed peripheral insulation pattern is formed through the semi-conducting layer and the sacrificial layer.
Public/Granted literature
- US20110108942A1 METHOD FOR PRODUCING FIELD EFFECT TRANSISTORS WITH A BACK GATE AND SEMICONDUCTOR DEVICE Public/Granted day:2011-05-12
Information query
IPC分类: