Invention Grant
US08383468B2 Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof 失效
显示装置及其制造方法以及半导体装置及其制造方法

  • Patent Title: Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof
  • Patent Title (中): 显示装置及其制造方法以及半导体装置及其制造方法
  • Application No.: US13440648
    Application Date: 2012-04-05
  • Publication No.: US08383468B2
    Publication Date: 2013-02-26
  • Inventor: Iwao Yagi
  • Applicant: Iwao Yagi
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: SNR Denton US LLP
  • Priority: JP2008-157489 20080617
  • Main IPC: H01L21/48
  • IPC: H01L21/48 H01L21/00 H01L21/4763
Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof
Abstract:
A method of forming a display device including source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. Source/drain electrodes of a thin-film transistor are formed on the substrate, while a pixel electrode is connected to the source/drain electrodes. The insulating partition wall layer is formed on the substrate, where the partition wall layer has a first opening extending to between the source electrode and the drain electrode. Furthermore, a channel-region semiconductor layer is formed by depositing a semiconductor layer over the partition wall layer. The channel-region semiconductor layer is on the bottom of the first opening to be separate from a upper part of the partition wall layer.
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