Invention Grant
- Patent Title: Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof
- Patent Title (中): 显示装置及其制造方法以及半导体装置及其制造方法
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Application No.: US13440648Application Date: 2012-04-05
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Publication No.: US08383468B2Publication Date: 2013-02-26
- Inventor: Iwao Yagi
- Applicant: Iwao Yagi
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2008-157489 20080617
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/00 ; H01L21/4763

Abstract:
A method of forming a display device including source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. Source/drain electrodes of a thin-film transistor are formed on the substrate, while a pixel electrode is connected to the source/drain electrodes. The insulating partition wall layer is formed on the substrate, where the partition wall layer has a first opening extending to between the source electrode and the drain electrode. Furthermore, a channel-region semiconductor layer is formed by depositing a semiconductor layer over the partition wall layer. The channel-region semiconductor layer is on the bottom of the first opening to be separate from a upper part of the partition wall layer.
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