Invention Grant
- Patent Title: Semiconductor device production method
- Patent Title (中): 半导体器件生产方法
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Application No.: US13085108Application Date: 2011-04-12
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Publication No.: US08383484B2Publication Date: 2013-02-26
- Inventor: Masaki Haneda
- Applicant: Masaki Haneda
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2010-187244 20100824
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
A semiconductor device production method includes: forming a gate insulating film on the p-type region of a semiconductor substrate; forming a first aluminum oxide film with an oxygen content lower than stoichiometric composition on the gate insulating film; forming a tantalum-nitrogen-containing film that contains tantalum and nitrogen on the first aluminum oxide film; forming an electrically conductive film on the tantalum-nitrogen-containing film; patterning the electrically conductive film to form a gate electrode; injecting n-type impurities into the p-type region using the gate electrode as a mask; and carrying out heat treatment after the formation of the tantalum-nitrogen-containing film.
Public/Granted literature
- US20120052645A1 SEMICONDUCTOR DEVICE PRODUCTION METHOD Public/Granted day:2012-03-01
Information query
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