Invention Grant
- Patent Title: Method for manufacturing solid-state image sensor
- Patent Title (中): 固态图像传感器的制造方法
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Application No.: US13088465Application Date: 2011-04-18
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Publication No.: US08383497B2Publication Date: 2013-02-26
- Inventor: Takanori Watanabe
- Applicant: Takanori Watanabe
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2010-112667 20100514
- Main IPC: H01L21/425
- IPC: H01L21/425

Abstract:
A method for manufacturing a sensor having pixels on a substrate, each pixel including a photoelectric converter, a charge-voltage converter, and a gate for forming a channel for transferring charges in the photoelectric converter to the charge-voltage converter, comprises a step of implanting ions into target regions of the substrate, where the photoelectric converters are to be formed, wherein the step is performed N times, and in each of the steps, the ions are implanted along a direction with an inclined angle with respect to a normal to the substrate surface, the target regions where the ions are implanted are different in each step, and for each step, a mask is formed on the substrate, having an opening for every N pixels, a plurality of the openings periodically arranged in a direction along an intersection line between the surface and a plane determined by the normal and the direction.
Public/Granted literature
- US20110281392A1 METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSOR Public/Granted day:2011-11-17
Information query
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