Invention Grant
- Patent Title: Substrate processing method
- Patent Title (中): 基板加工方法
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Application No.: US12721006Application Date: 2010-03-10
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Publication No.: US08383521B2Publication Date: 2013-02-26
- Inventor: Eiichi Nishimura , Masato Kushibiki , Fumiko Yamashita
- Applicant: Eiichi Nishimura , Masato Kushibiki , Fumiko Yamashita
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2009-056336 20090310
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A substrate processing method processes a substrate including a processing target film, an organic film provided on the processing target film and having a plurality of line-shaped portions having fine width, and a hard film covering the line-shaped portions and the processing target film exposed between the line-shaped portions. The method includes a first etching step of etching a part of the hard film to expose the organic film and portions of the processing target film between the line-shaped portions; an ashing step of selectively removing the exposed organic film; and a second etching step of etching a part of the remaining hard film.
Public/Granted literature
- US20100233883A1 SUBSTRATE PROCESSING METHOD Public/Granted day:2010-09-16
Information query
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