Invention Grant
US08383737B2 Compound for gap-filling of semiconductor device and coating composition using the same
有权
用于半导体器件的间隙填充的化合物和使用其的涂料组合物
- Patent Title: Compound for gap-filling of semiconductor device and coating composition using the same
- Patent Title (中): 用于半导体器件的间隙填充的化合物和使用其的涂料组合物
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Application No.: US12451247Application Date: 2007-12-31
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Publication No.: US08383737B2Publication Date: 2013-02-26
- Inventor: Chang Soo Woo , Hyun Hoo Sung , Jin Hee Bae , Dong Seon Uh , Jong Seob Kim
- Applicant: Chang Soo Woo , Hyun Hoo Sung , Jin Hee Bae , Dong Seon Uh , Jong Seob Kim
- Applicant Address: KR Gumi-si, Gyeongsangbuk-do
- Assignee: Cheil Industries, Inc.
- Current Assignee: Cheil Industries, Inc.
- Current Assignee Address: KR Gumi-si, Gyeongsangbuk-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2007-0043789 20070504; KR10-2007-0045215 20070509
- International Application: PCT/KR2007/007062 WO 20071231
- International Announcement: WO2008/136567 WO 20081113
- Main IPC: C08L83/05
- IPC: C08L83/05
Abstract:
A compound for filling small gaps in a semiconductor device and a composition comprising the compound are provided. The composition can completely fill holes having a diameter of 70 nm or less and an aspect ratio (i.e. height/diameter ratio) of 1 or more in a semiconductor substrate without any defects, e.g., air voids, by a general spin coating technique. In addition, the composition can be completely removed from holes at a controllable rate without leaving any residue by the treatment with a hydrofluoric acid solution after being cured by baking. Furthermore, the composition is highly stable during storage.
Public/Granted literature
- US20100093923A1 COMPOUND FOR GAP-FILLING OF SEMICONDUCTOR DEVICE AND COATING COMPOSITION USING THE SAME Public/Granted day:2010-04-15
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