A first patterned etch stop layer and a first patterned conductor layer are laminated by a dielectric material to a second patterned etch stop layer and a second patterned conductor layer. As the etch stop metal of the first and second patterned etch stop layers is selectively etchable compared to a conductor metal of the first and second patterned conductor layers, the first and second patterned etch stop layers provide an etch stop for substrate formation etch processes. In this manner, etching of the first and second patterned conductor layers is avoided insuring that impedance is controlled to within tight tolerance.