Invention Grant
- Patent Title: Phase change random access memory device and method of manufacturing the same
- Patent Title (中): 相变随机存取存储器件及其制造方法
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Application No.: US12839465Application Date: 2010-07-20
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Publication No.: US08384056B2Publication Date: 2013-02-26
- Inventor: Min Seok Kim , Hyo Seob Yoon
- Applicant: Min Seok Kim , Hyo Seob Yoon
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2009-0093616 20090930
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A phase change random access memory includes a semiconductor substrate, a switching device pattern formed on the semiconductor substrate, a bottom electrode contact pattern formed on the switching device pattern, a phase change layer pattern formed on the bottom electrode contact pattern, and an insulating layer disposed at a portion of an contact surface between the bottom electrode contact pattern and the phase change layer pattern.
Public/Granted literature
- US20110073830A1 PHASE CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-03-31
Information query
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