Invention Grant
US08384062B2 Memory including vertical bipolar select device and resistive memory element
失效
存储器包括垂直双极选择器件和电阻存储元件
- Patent Title: Memory including vertical bipolar select device and resistive memory element
- Patent Title (中): 存储器包括垂直双极选择器件和电阻存储元件
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Application No.: US12853791Application Date: 2010-08-10
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Publication No.: US08384062B2Publication Date: 2013-02-26
- Inventor: Thomas Happ , Jan Boris Philipp
- Applicant: Thomas Happ , Jan Boris Philipp
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/82
- IPC: H01L21/82
Abstract:
A memory includes a first vertical bipolar select device including a first base and a first emitter, a first phase change element coupled to the first emitter, a second vertical bipolar select device including a second base and a second emitter, a second phase change element coupled to the second emitter, and a buried word line contacting the first base and the second base.
Public/Granted literature
- US20100321990A1 Memory Including Vertical Bipolar Select Device and Resistive Memory Element Public/Granted day:2010-12-23
Information query
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