Invention Grant
- Patent Title: Semiconductor structure having blocks connected by nanowires
- Patent Title (中): 具有通过纳米线连接的块的半导体结构
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Application No.: US12782364Application Date: 2010-05-18
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Publication No.: US08384069B2Publication Date: 2013-02-26
- Inventor: Carole Pernel , Cécilia Dupre
- Applicant: Carole Pernel , Cécilia Dupre
- Applicant Address: FR Paris
- Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Current Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Current Assignee Address: FR Paris
- Agency: Pillsbury Winthrop Shaw Pittman, LLP
- Priority: FR0953309 20090519
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L35/24 ; H01L51/00 ; H01L29/06 ; H01L31/00 ; H01L21/00 ; H01L21/20 ; H01L21/36
Abstract:
A semiconductor structure includes a support and at least one block provided on the support. The block includes a stack including alternating layers based on a first semiconductor material and layers based on a second semiconductor material different from the first material, the layers presenting greater dimensions than layers such that the stack has a lateral tooth profile and a plurality of spacers filling the spaces formed by the tooth profile, the spacers being made of a third material different from the first material such that each of the lateral faces of the block presents alternating lateral bands based on the first material and alternating lateral bands based on the third material. At least one of the lateral faces of the block is partially coated with a material promoting the growth of nanotubes or nanowires, the catalyst material exclusively coating the lateral bands based on the first material or exclusively coating the lateral bands based on the third material.
Public/Granted literature
- US20100295024A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR PRODUCING A SEMICONDUCTOR STRUCTURE Public/Granted day:2010-11-25
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