Invention Grant
- Patent Title: Thin film transistor and method of fabricating the same
- Patent Title (中): 薄膜晶体管及其制造方法
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Application No.: US13495583Application Date: 2012-06-13
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Publication No.: US08384075B2Publication Date: 2013-02-26
- Inventor: Gee-Sung Chae , Mi-Kyung Park
- Applicant: Gee-Sung Chae , Mi-Kyung Park
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Brinks Hofer Gilson & Lione
- Priority: KR2005-0029121 20050407
- Main IPC: H01L29/08
- IPC: H01L29/08

Abstract:
A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.
Public/Granted literature
- US20120248449A1 THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2012-10-04
Information query
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