Invention Grant
- Patent Title: Thin-film transistor having high adhesive strength between barrier film and drain electrode and source electrode films
- Patent Title (中): 阻挡膜和漏电极与源电极膜之间具有高粘合强度的薄膜晶体管
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Application No.: US12998283Application Date: 2009-09-24
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Publication No.: US08384083B2Publication Date: 2013-02-26
- Inventor: Satoru Mori , Shozo Komiyama
- Applicant: Satoru Mori , Shozo Komiyama
- Applicant Address: JP Tokyo JP Chigasaki-shi
- Assignee: Mitsubishi Materials Corporation,Ulvac, Inc.
- Current Assignee: Mitsubishi Materials Corporation,Ulvac, Inc.
- Current Assignee Address: JP Tokyo JP Chigasaki-shi
- Agency: Edwards Wildman Palmer LLP
- Priority: JP2008-273728 20081024
- International Application: PCT/JP2009/004823 WO 20090924
- International Announcement: WO2010/047040 WO 20100429
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
This thin-film transistor includes adhesive strength enhancing films between a barrier film and electrode films. Each of the adhesive strength enhancing film is composed of two zones including (a) a pure copper zone that is formed on the electrode film side, and (b) a component concentrated zone that is formed in an interface portion contact with the barrier film, and that includes Cu, Ca, oxygen, and Si as constituents. In concentration distributions of Ca and oxygen in a thickness direction of the component concentrated zone, a maximum content of Ca of a Ca-containing peak is in a range of 5 to 20 at %, and a maximum content of oxygen of an oxygen-containing peak is in a range of 30 to 50 at %, respectively.
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