Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12851097Application Date: 2010-08-05
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Publication No.: US08384085B2Publication Date: 2013-02-26
- Inventor: Hajime Kimura , Junichiro Sakata , Kohei Toyotaka
- Applicant: Hajime Kimura , Junichiro Sakata , Kohei Toyotaka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-184343 20090807
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
An object is to provide a semiconductor device in which characteristics of a driver circuit portion are improved while the aperture ratio of a pixel portion is increased. Alternatively, it is an object to provide a semiconductor device with low power consumption or to provide a semiconductor device in which the threshold voltage of a transistor can be controlled. The semiconductor device includes a substrate having an insulating surface, a pixel portion provided over the substrate, and at least some of driver circuits for driving the pixel portion. A transistor included in the pixel portion and a transistor included in the driver circuit are top-gate bottom-contact transistors. Electrodes and a semiconductor layer of the transistor in the pixel portion have light-transmitting properties. The resistance of electrodes in the driver circuit is lower than the electrodes included in the transistor in the pixel portion.
Public/Granted literature
- US20110031499A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-02-10
Information query
IPC分类: