Invention Grant
- Patent Title: Nitride semiconductor device and method of manufacturing the same
- Patent Title (中): 氮化物半导体器件及其制造方法
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Application No.: US13030443Application Date: 2011-02-18
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Publication No.: US08384089B2Publication Date: 2013-02-26
- Inventor: Ken Sato
- Applicant: Ken Sato
- Applicant Address: JP Saitama
- Assignee: Sanken Electric Co., Ltd.
- Current Assignee: Sanken Electric Co., Ltd.
- Current Assignee Address: JP Saitama
- Agency: Wilmer Cutler Pickering Hale and Dorr LLP
- Priority: JP2010-035950 20100222
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/20 ; H01L21/30
Abstract:
A nitride semiconductor device including: a substrate; a nitride semiconductor layer formed on the substrate and having a heterojunction interface; and a recess portion formed on the nitride semiconductor layer, wherein the nitride semiconductor layer includes: a carrier transit layer, which has a composition represented by the formula: Alx1Inx2Ga1−x1−x2N, (0≦x1≦1, 0≦x2≦1, 0≦(x1+x2)≦1); and a carrier supply layer including: a first layer formed on the carrier transit layer, said first layer having a composition represented by the formula: AlyGa1−yN, (0
Public/Granted literature
- US20110204379A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-08-25
Information query
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