Invention Grant
- Patent Title: Low 1C screw dislocation 3 inch silicon carbide wafer
- Patent Title (中): 低1C螺丝错位3英寸碳化硅晶圆
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Application No.: US11940454Application Date: 2007-11-15
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Publication No.: US08384090B2Publication Date: 2013-02-26
- Inventor: Adrian Powell , Mark Brady , Stephan G. Mueller , Valeri F. Tsvetkov , Robert T. Leonard
- Applicant: Adrian Powell , Mark Brady , Stephan G. Mueller , Valeri F. Tsvetkov , Robert T. Leonard
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Moore & Van Allen PLLC
- Agent Steven B. Phillips
- Main IPC: H01L29/24
- IPC: H01L29/24
Abstract:
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm−2.
Public/Granted literature
- US20080169476A1 Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer Public/Granted day:2008-07-17
Information query
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