Invention Grant
US08384129B2 Transistor with enhanced channel charge inducing material layer and threshold voltage control
有权
具有增强的通道电荷诱导材料层和阈值电压控制的晶体管
- Patent Title: Transistor with enhanced channel charge inducing material layer and threshold voltage control
- Patent Title (中): 具有增强的通道电荷诱导材料层和阈值电压控制的晶体管
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Application No.: US12823210Application Date: 2010-06-25
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Publication No.: US08384129B2Publication Date: 2013-02-26
- Inventor: Francis J. Kub , Karl D. Hobart , Charles R. Eddy, Jr. , Michael A Mastro , Travis Anderson
- Applicant: Francis J. Kub , Karl D. Hobart , Charles R. Eddy, Jr. , Michael A Mastro , Travis Anderson
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agent Amy Ressing; Rebecca L. Forman
- Main IPC: H01L29/778
- IPC: H01L29/778
Abstract:
High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.
Public/Granted literature
- US20100327322A1 Transistor with Enhanced Channel Charge Inducing Material Layer and Threshold Voltage Control Public/Granted day:2010-12-30
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