Invention Grant
- Patent Title: Memory cell having a shared programming gate
- Patent Title (中): 具有共享编程门的存储单元
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Application No.: US11785608Application Date: 2007-04-19
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Publication No.: US08384149B2Publication Date: 2013-02-26
- Inventor: Shih Wei Wang , Te-Hsun Hsu , Hung-Cheng Sung
- Applicant: Shih Wei Wang , Te-Hsun Hsu , Hung-Cheng Sung
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd
- Current Assignee Address: TW Hsin-Chu
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Main IPC: H01L29/788
- IPC: H01L29/788

Abstract:
A semiconductor memory device includes a substrate, and a trench formed in the substrate. First and second floating gates, each associated with corresponding first and second memory cells, extend into the trench. Since the trench can be made relatively deep, the floating gates may be made relatively large while the lateral dimensions of the floating gates remains small. Moreover, the insulator thickness between the floating gate and a sidewall of the trench where a channel region is formed can be made relatively thick, even though the lateral extent of the memory cell is reduced. A programming gate extends into the trench between the first and second floating gates, and is shared, along with a source region, by the two memory cells.
Public/Granted literature
- US20080258200A1 Memory cell having a shared programming gate Public/Granted day:2008-10-23
Information query
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