Invention Grant
- Patent Title: High performance system-on-chip using post passivation process
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Application No.: US12186530Application Date: 2008-08-06
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Publication No.: US08384189B2Publication Date: 2013-02-26
- Inventor: Mou-Shing Lin
- Applicant: Mou-Shing Lin
- Applicant Address: TW Hsinchu
- Assignee: Megica Corporation
- Current Assignee: Megica Corporation
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L23/532
- IPC: H01L23/532
Abstract:
The present invention extends the above referenced continuation-in-part application by in addition creating high quality electrical components, such as inductors, capacitors or resistors, on a layer of passivation or on the surface of a thick layer of polymer. In addition, the process of the invention provides a method for mounting discrete electrical components at a significant distance removed from the underlying silicon surface.
Public/Granted literature
- US20080284032A1 High performance system-on-chip using post passivation process Public/Granted day:2008-11-20
Information query
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