Invention Grant
- Patent Title: Nanochannel device and method for manufacturing thereof
- Patent Title (中): 纳米通道装置及其制造方法
-
Application No.: US13100537Application Date: 2011-05-04
-
Publication No.: US08384195B2Publication Date: 2013-02-26
- Inventor: Gang Wang , Joshua Tseng , Roger Loo
- Applicant: Gang Wang , Joshua Tseng , Roger Loo
- Applicant Address: BE Leuven TW Hsinchu BE Leuven
- Assignee: IMEC,Taiwan Semiconductor Manufacturing Company, Ltd.,Katholieke Universiteit Leuven, K.U. Leuven R&D
- Current Assignee: IMEC,Taiwan Semiconductor Manufacturing Company, Ltd.,Katholieke Universiteit Leuven, K.U. Leuven R&D
- Current Assignee Address: BE Leuven TW Hsinchu BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
The present disclosure relates to a device comprising a mono-crystalline substrate, the mono-crystalline substrate having at least one recessed region which exposes predetermined crystallographic planes of the mono-crystalline substrate, the at least one recessed region further having a recess width and comprising a filling material and an embedded nanochannel, wherein the width, the shape, and the depth of the embedded nanochannel is determined by the recess width of the at least one recessed region and by the growth rate of the growth front of the filling material in a direction perpendicular to the exposed predetermined crystallographic planes. The present disclosure is also related to a method for manufacturing a nanochannel device.
Public/Granted literature
- US20110272789A1 Nanochannel Device and Method for Manufacturing Thereof Public/Granted day:2011-11-10
Information query
IPC分类: