Invention Grant
- Patent Title: Semiconductor apparatus with improved efficiency of thermal radiation
- Patent Title (中): 具有提高热辐射效率的半导体装置
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Application No.: US12990681Application Date: 2009-04-30
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Publication No.: US08384211B2Publication Date: 2013-02-26
- Inventor: Akitaka Soeno
- Applicant: Akitaka Soeno
- Applicant Address: JP Toyota-shi
- Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee Address: JP Toyota-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-122296 20080508
- International Application: PCT/JP2009/058507 WO 20090430
- International Announcement: WO2009/136591 WO 20091112
- Main IPC: H01L23/10
- IPC: H01L23/10

Abstract:
A semiconductor apparatus includes a first stacked body including a first radiator plate, a first insulating layer, a first conductive layer and a first semiconductor element in this order; a second stacked body including a second radiator plate, a second insulating layer, a second conductive layer and a second semiconductor element in this order and configured to be made of a semiconductor material different from that of the first semiconductor element; and a connecting part configured to electrically connect the first conductive layer and the second conductive layer, wherein the first stacked body and the second stacked body are thermally insulated.
Public/Granted literature
- US20110049535A1 SEMICONDUCTOR APPARATUS Public/Granted day:2011-03-03
Information query
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