Invention Grant
- Patent Title: Hybrid bump capacitor
- Patent Title (中): 混合电容器
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Application No.: US12885722Application Date: 2010-09-20
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Publication No.: US08384226B2Publication Date: 2013-02-26
- Inventor: Yikui (Jen) Dong , Steven L. Howard , Freeman Y. Zhong , David S. Lowrie
- Applicant: Yikui (Jen) Dong , Steven L. Howard , Freeman Y. Zhong , David S. Lowrie
- Applicant Address: US CA Milpitas
- Assignee: LSI Corporation
- Current Assignee: LSI Corporation
- Current Assignee Address: US CA Milpitas
- Agent Christopher P. Maiorana, PC
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L27/108 ; H01L21/00

Abstract:
A device fabricated on a chip is disclosed. The device generally includes (A) a first pattern and a second pattern both created in an intermediate conductive layer of the chip, (B) at least one via created in an insulating layer above the intermediate conductive layer and (C) a first bump created in a top conductive layer above the insulating layer. The first pattern generally establishes a first of a plurality of plates of a first capacitor. The via may be aligned with the second pattern. The first bump may (i) be located directly above the first plate, (ii) establish a second of the plates of the first capacitor, (iii) be suitable for flip-chip bonding, (iv) connect to the second pattern through the via such that both of the plates of the first capacitor are accessible in the intermediate conductive layer. The first pattern and the second pattern may be shaped as interlocking combs.
Public/Granted literature
- US20110006395A1 HYBRID BUMP CAPACITOR Public/Granted day:2011-01-13
Information query
IPC分类: