Invention Grant
- Patent Title: Piezoelectric resonator structure having an interference structure
- Patent Title (中): 具有干涉结构的压电谐振器结构
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Application No.: US12641697Application Date: 2009-12-18
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Publication No.: US08384497B2Publication Date: 2013-02-26
- Inventor: Hao Zhang
- Applicant: Hao Zhang
- Agency: Morris Manning & Martin LLP
- Agent Tim Tingkang Xia, Esq.
- Main IPC: H03H9/15
- IPC: H03H9/15 ; H03H9/13 ; H03H9/54
Abstract:
A piezoelectric resonator structure, comprising: (i) a substrate, (ii) an acoustic mirror, (iii) a first electrode, (iv) a piezoelectric layer, and (v) a second electrode, wherein each of the substrate, the acoustic mirror, the first electrode, the piezoelectric layer, and the second electrode has a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the overlapped area of body portions of the substrate, the acoustic mirror, the first electrode, the piezoelectric layer and the second electrode is defined as an active area A. A plurality of air gaps and interference structures is formed at the first end portion of the piezoelectric layer and the second electrode, and the second end portion of the piezoelectric layer and the second electrode to enhance the performance of the piezoelectric resonator.
Public/Granted literature
- US20110148547A1 PIEZOELECTRIC RESONATOR STRUCTURE Public/Granted day:2011-06-23
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